
曾雄辉
- 单位:中国科学院苏州纳米技术与纳米仿生研究所
- 地址:江苏省苏州工业园区若水路398号
- 电话:0512-62872545
- 邮箱:xhzeng2007@sinano.ac.cn
个人简历/Personal resume
研究员,博士生导师,现任测试分析平台副主任。2005年于中国科学院上海光学精密机械研究所获博士学位,同年获得“上海应用材料研究与发展”研究生奖学金。2005年至2007年在清华大学从事博士后研究,期间获得中国博士后科学基金资助。2007年6月起任职中国科学院苏州纳米所,2022.11-2023.11获国家留学基金资助在德国于利希研究中心的Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons进行访问研究。先后主持国家自然科学基金青年/面上项目、国家重点研发计划子课题,中国科学院仪器设备功能开发项目、中国科学院人才项目、江苏省自然科学基金、国家标准研制等10余个项目。在Crystal Growth and Design, Applied Physics Letters, Journal of Luminescence, Journal of Alloys and Compounds等专业期刊上发表论文50余篇,授权发明专利10余项,编制3项国家标准。2008年获得苏州市紧缺高层次人才资助,2010年获得苏州市2008-2009年度自然科学优秀论文一等奖,2021年获得中国科学院院级人才项目资助。指导和培养了研究生20余名,毕业研究生去向包括中芯国际、杰华特、西部数据等知名企业。
研究方向/Research direction
1. 面向深紫外光电子器件的AlN单晶生长和物性研究;
2. 掺杂氮化半导体材料(稀土掺杂,p型掺杂)的光电磁特性研究;
3. 氮化物半导体材料微结构的电子显微分析研究。
论文专著/The monograph
代表性论文:
1. Yue Wang, Zhengqian Lu*, Yuning Wang, Xionghui Zeng*, Ke Xu*. Luminescence mechanism of prismatic stacking faults in homoepitaxial AlN, Applied Physics Letters, 2026, 128, 132102.
2. Zhengdong Shu, Xiaoming Dong, Xiaodan Wang*, Da Xu, Lei Ke, Xionghui Zeng*, Wentao Zhang, Ke Xu*. Strain-anchored monatomic columns: Direct observation of Tb segregation and its pinning effect at GaN Stacking faults boundaries. Scripta Materialia, 2026, 280, 117346.
3. Wenxuan Wu, Yangye Pan, Xiaodong Gao, Xiaodan Wang∗, Sida Wei, Jiahao Sun, Xionghui Zeng∗, Shunan Zheng and Ke Xu*, Optical properties of Mg-implanted GaN grown on free-standing substrates, Journal of Physics D: Applied Physics. 2025, 58, 135101.
4. Wenxuan Wu, Zhengdong Shu, Xiaodan Wang *, Yue Wang, Yangye Pan, Jiahao Sun, Xiaodong Gao, Shunan Zheng, Miao Wang, Xionghui Zeng *, Ke Xu*. Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres, Journal of Luminescence, 2025, 284, 121294.
5. Hao Zhou, Kebei Chen, Xiaodong Gao, Shunan Zheng, Xionghui Zeng*, Chuang Wang, Yue Wang, Yangye Pan and Ke Xu*. Nanoindentation mechanical studies of bulk AlN single crystals with different orientations, Semiconductor Science and Technology, 2025, 40, 015008.
6. Chuang Wang, Xiaodong Gao, Jiafan Chen, Luhua Wang, Xionghui Zeng*, Shunan Zheng, Chunpeng Li, Zhengqian Lu, Xiaoming Dong, Jun Huang, Ke Xu*, Morphology evolution and cathodoluminescence properties of non-polar aluminum nitride microwires, Journal of Alloys and compounds, 2023, 937, 168407.
7. Di Di Li, Xu Jun Su, Jing Jing Chen, Lu Hua Wang, Jun Huang, Mu Tong Niu, Xiaodan Wang, Xionghui Zeng*, Ke Xu*. Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE, Journal of Crystal Growth, 2022, 592, 126731.
8. J. Wang, X. Wang*, J. Chen, X. Gao, X. Zeng*, H. Mao, K. Xu*, Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD, Journal of Alloys and Compounds. 2021, 870, 159477.
9. H. Ma, X. Wang*, F. Chen, J. Chen, X. Zeng*, X. Gao, D. Wang, H. Mao, K. Xu. Luminescence properties and energy transfer mechanism of Eu3+ and Tm3+ co-doped AlN thin films. Journal of Luminescence, 2021, 236: 118082.
10. J. Wang, X. Wang, W. Shu, X. Zeng*, J. Chen, K. Xu*, Origin of blue luminescence in Mg-doped GaN, AIP Advances. 2021, 11, 035131.(被美国物理研究所AIP选为Featured Article和SCI light Paper, https://aip.scitation.org/doi/10.1063/10.0003942 ).

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