曾雄辉

个人简历/Personal resume

  研究员，博士生导师，现任测试分析平台副主任。2005年于中国科学院上海光学精密机械研究所获博士学位，同年获得“上海应用材料研究与发展”研究生奖学金。2005年至2007年在清华大学从事博士后研究，期间获得中国博士后科学基金资助。2007年6月起任职中国科学院苏州纳米所。先后主持国家自然科学基金面上项目、国家重点研发计划子课题，中国科学院仪器设备功能开发、中国科学院人才项目、江苏省自然科学基金、国家标准研制等10余个项目。在Crystal Growth and Design, Applied Physics Letters, Journal of Luminescence, Journal of Alloys and Compounds等专业期刊上发表论文50余篇，授权发明专利10余项，编制3项国家标准。2008年获得苏州市紧缺高层次人才资助，2010年获得苏州市2008-2009年度自然科学优秀论文一等奖，2021年获得中国科学院院级人才项目资助。指导和培养了研究生20余名，毕业研究生去向包括中芯国际、杰华特、西部数据等知名企业。

研究方向/Research direction

  1. 面向深紫外光电子器件的AlN单晶生长和物性研究。

  2. 掺杂氮化半导体材料（稀土掺杂，p型掺杂）的光电磁特性研究。

  3. 氮化物半导体材料微结构的电子显微分析研究。

论文专著/The monograph

代表性论文：

  1. Chuang Wang, Xiaodong Gao, Jiafan Chen, Luhua Wang, Xionghui Zeng*, Shunan Zheng, Chunpeng Li, Zhengqian Lu, Xiaoming Dong, Jun Huang, Ke Xu*, Morphology evolution and cathodoluminescence properties of non-polar aluminum nitride microwires, Journal of Alloys and compounds, 2023, 937, 168407.

  2. Di Di Li, Xu Jun Su, Jing Jing Chen, Lu Hua Wang, Jun Huang, Mu Tong Niu,Xiaodan Wang, Xionghui Zeng*, Ke Xu*. Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE, Journal of Crystal Growth, 2022, 592, 126731.

  3. J. Wang, X. Wang*, J. Chen, X. Gao, X. Zeng*, H. Mao, K. Xu*, Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD, Journal of Alloys and Compounds. 2021, 870, 159477.

  4. H. Ma, X. Wang*, F. Chen, J. Chen, X. Zeng*, X. Gao, D. Wang, H. Mao, K. Xu. Luminescence properties and energy transfer mechanism of Eu3+ and Tm3+ co-doped AlN thin films. Journal of Luminescence, 2021, 236: 118082.

  5. J. Wang, X. Wang, W. Shu, X. Zeng*, J. Chen, K. Xu*, Origin of blue luminescence in Mg-doped GaN, AIP Advances. 2021, 11, 035131.(被美国物理研究所AIP选为Featured Article和SCI light Paper, https://aip.scitation.org/doi/10.1063/10.0003942 ).

  6. Feifei Chen, Yonglu Xia, Xiaodan Wang*, Jiafan Chen, Xionghui Zeng*, Jianfeng Wang ,Ke Xu, Raman scattering and cathodoluminescence properties of Er3+ and Eu3+ co-doped GaN films[J]. Journal of Luminescence 2019, 206: 603 -607.

  7. Feifei Chen, Xiaodan Wang*, Xiang Li, Shunan Zheng, Xionghui Zeng*, Ke Xu, Effects of Eu ions dose and annealing temperature on the structural and optical properties of Eu-implanted AlN thin films, Superlattices and Microstructures, 2019, 129: 47-53.

  8. Xiaodan Wang , Yajuan Mo , Xionghui Zeng*, Jianfeng Wang, and Ke Xu*. Simultaneous emission of red, green, and blue in Pr, Er, and Tm co-implanted GaN thin films, Materials Chemistry and Physics, 2017, 199: 567-570.

  9. X.D. Wang*, M.M. Yang, X.H. Zeng*,Y.J. Mo, J.C. Zhang, J.F. Wang, K. Xu*. Investigation of energy transfer mechanism in Er3+ and Tm3+ doped AlN crystalline films, Journal of Alloys and Compounds, 2017, 726: 209-213.

  10. Xiaodan Wang, Yajuan Mo, Xionghui Zeng*, Mingming Yang, Jianfeng Wang, Ke Xu. Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films. Optical Materials Express, 2016, 6(5): 1692-1700.

  11. Yajuan Mo, Xiaodan Wang*, Mingming Yang, Xionghui Zeng*, Jianfeng Wang, Ke Xu. Temperature-dependent Cathodoluminescence Investigation of Er-implanted GaN thin films. Physica Status Solidi B: Basic Solid State Physics, 2015, 253(3): 515-520.

  12. Lin Gan, Fang-Fang Xu, Xiong-Hui Zeng, Zuo-Sheng Li, Zhi-Yong Mao, Ping Lu, Ying-Chun Zhu, Xue-Jian Liu, Lin-Lin Zhang. Multiple doping structures of the rare-earth atoms in β-SiAlON: Ce phosphors and their effects on luminescence properties. Nanoscale, 2015, 7(6): 11393—11400.